The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2000
Filed:
Mar. 06, 1997
Tadao Isogai, Yokohama, JP;
Nikon Corporation, Tokyo, JP;
Abstract
The invention is directed to reducing incidental capacitance associated with a MOS transistor, especially such a transistor as used with a solid-state image-pickup device, without reducing the channel conductance of the MOS transistor. To such end, N.sup.+ -type high-concentration fields are formed near the surface of a P-type well field that in a semiconductor substrate. An N-type low-concentration field is formed between and surrounding the N.sup.+ -type high-concentration fields. A depletion layer is formed by making PN junctions between N.sup.+ -type high-concentration fields and the well field in a reverse-bias state to deplete the perimeter of the N.sup.+ -type high-concentration fields and the entire N-type low-concentration field.