Hydrogen getter for integrated microelectronic assembly

Abstract

Disclosed are a packaging component for packaging a microelectronic (e.g., III-V semiconductor) device, the packaged microelectronic device formed using such component, and method for forming the package component and packaged microelectronic device. The component (which can be, e.g., a lid or container 21 of the package) has sequentially deposited layers of metal layers (37, 50), to be located within the package, attached to a housing member, to act as a hydrogen getter in the package. The sequentially deposited layers of metal layers includes at least a first layer (3) of Ni adjacent the housing member surface, to improve adherence of the sequentially deposited layers and interstitially trap hydrogen; an outermost layer (11) of palladium to convert molecular hydrogen to hydrogen atoms and as the primary absorber of the hydrogen; and a layer (9) of Ti or Zr adjacent this outermost layer and acting as a secondary absorber of the hydrogen. Additional layers (5, 7) of nickel and of titanium or zirconium can be provided between the first layer and the layer adjacent the outermost layer. These layers of the sequentially deposited layers of metal layers can be deposited by, e.g., vacuum evaporation or sputtering. Desirably, where sequentially deposited layers is provided directly on the housing member, the surface of the housing member is roughened prior to depositing the first layer thereon, in order to improve hydrogen absorption efficiency of the sequentially deposited layers of metal layers.