The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2000

Filed:

Oct. 28, 1997
Applicant:
Inventors:

Jai-Young Lee, Taejon, KR;

Yoon-Kee Kim, Taejon, KR;

Yoon-Jung Yong, Taejon, KR;

Young-Soo Han, Taejon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D / ; C23C / ;
U.S. Cl.
CPC ...
427577 ; 427534 ; 4272498 ; 1187 / ; 118728 ;
Abstract

The present invention relates to a CVD apparatus for highly textured diamond film formation and a method for forming a highly textured diamond film on the surface of a silicone substrate by generating a high density plasma so that each diamond film grain can have the same orientation as the substrate. The present inventors developed an improved chemical vapor deposition apparatus and a method for highly textured diamond film formation, on the ground that the nucleation density having a heteroepitaxy relation with a silicone substrate can be increased by modifying the substrate support and by generating a high density plasma right on the substrate while subjecting the whole substrate to the plasma. In accordance with the present invention, a diamond film which is close to a single crystal and has a heteroepitaxy relation with the crystalline orientation of a substrate can be formed in a simple manner.


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