The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2000
Filed:
Oct. 17, 1997
Laura Ellen Adams, Basking Ridge, NJ (US);
Clyde George Bethea, Edison, NJ (US);
Wei-Chiao Fang, Middletown, NJ (US);
Gerald Nykolak, Long Beach Long Island, NY (US);
Roosevelt People, Plainfield, NJ (US);
Arthur Mike Sergent, New Providence, NJ (US);
Tawee Tanbun-Ek, Califon, NJ (US);
Won-Tien Tsang, Holmdel, NJ (US);
Lucent Technologies Inc., Murray Hill, NJ (US);
Abstract
A tunable semiconductor laser comprises a gain section having an MQW active region, a uniform pitch grating DFB region, and first waveguide. A composite reflector, including a second MQW region and a second waveguide, forms a cavity resonator with the DFB region. A voltage applied to the composite reflector induces a quantum confined stark effect, thereby allowing the wavelength to be altered. In one embodiment, the current drive to the active region and the shape of the first waveguide (e.g., a raised-sine function) are mutually adapted so that N longitudinal modes have essentially the same threshold gain and so that the DFB region spanned by the first waveguide is segmented into N zones, each zone providing optical feedback at a different wavelength corresponding to a different longitudinal mode.