The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2000

Filed:

Jan. 25, 1999
Applicant:
Inventors:

Philip Miguelez, Warminster, PA (US);

Rudolph J Menna, Harleysville, PA (US);

Assignee:

General Instrument Corporation, Horsham, PA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03F / ;
U.S. Cl.
CPC ...
330276 ; 330311 ;
Abstract

The present invention incorporates GaAs field effect transistors (GaAsFETs) in a radio frequency (RF) ultra-linear amplifier. The described amplifier circuit is a transformer-coupled single input, signal processing unit incorporating ultra-fast, GaAsFETs in a three active device cascode. This arrangement allows for a higher working voltage to be applied across the three semiconductors rather than a traditional two transistor cascode. The operational bandwidth can process a mixed modulation signal comprised of analog and digital channels.


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