The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2000
Filed:
Aug. 28, 1997
Kazunori Masuda, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
Disclosed is a contact structure between the bit line and the source/drain region in an EEPROM. An element region is isolated by a trench type element isolation region in a silicon substrate. The source/drain region is formed in the portion of the element region, that is surrounded by the trench type element isolation region and a multilayered gate. A silicon nitride film covers the surface of the trench type element isolation region and that of the multilayered gate, and an interlevel insulating film made from silicon dioxide is formed. A contact hole is formed in the interlevel insulating film. The source/drain region and the silicon nitride film are exposed in the contact hole. A bit line is connected to the source/drain region through the contact hole.