The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2000
Filed:
Dec. 30, 1997
Hirofumi Mokuya, Kariya, JP;
Mutuo Taniguchi, Kariya, JP;
Anden Co., Ltd., , JP;
Abstract
An intelligence power device (IPD), having a temperature-sensitive and heat-damage protecting function, is used as a semiconductor relay which controls load current supplied to an electric load. A target sensitive temperature T.sub.SD of IPD is determined according to an allowable load current value, using an equation T.sub.SD =I.sup.2 .times.R.sub.ON .times.R.sub.TEMP +T.sub.ROOM, where I represents an allowable load current value, R.sub.ON represents an on-resistance value of a power MOSFET, R.sub.TEMP represents a thermal resistance value of an entire radiation system of IPD, and T.sub.ROOM represents an ambient temperature of IPD. When the load current exceeds the allowable load current value, IPD stops the load current so that the load circuit can be prevented from being subjected to excessively large current.