The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2000
Filed:
Sep. 27, 1996
Applicant:
Inventors:
Naoto Okabe, Chita-gun, JP;
Tsuyoshi Yamamoto, Kariya, JP;
Assignee:
Nippondenso Co., Ltd., Kariya, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257330 ; 257331 ; 257332 ; 257341 ; 257390 ;
Abstract
A concave channel type DMOS structure having an improved gate-to-source breakdown voltage are disclosed. By establishing a curvature at a corner portion of a lattice-like pattern in a groove portion for forming the concave channel structure, the shape of the tip of a three-dimensionally projecting portion of a semiconductor region determined by a plane angle of the corner portion in the lattice-like pattern and an inclination of the groove portion is rounded. That is, a three-dimensionally sharpened corner portion in the concave channel structure is rounded, and thereby electric field concentration at the corner portion is suppressed.