The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2000
Filed:
Mar. 03, 1998
Applicant:
Inventors:
Takahiro Onakado, Hyogo, JP;
Natsuo Ajika, Hyogo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257318 ; 257320 ; 257326 ; 257378 ; 365177 ;
Abstract
A memory cell array of a nonvolatile semiconductor memory device is provided with a bipolar transistor whose base is connected to a node between sources of two memory cell transistors. A memory cell SL decoder controls the potential level of an emitter of the bipolar transistor. A collector of the bipolar transistor is held at a ground potential. In a read operation, the emitter potential is so controlled that the bipolar transistor enters an ON state, and a current flowing through a channel of either memory cell transistor is amplified by the bipolar transistor to be read.