The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2000
Filed:
Mar. 13, 1998
Rohm Co., Ltd., Kyoto, JP;
Abstract
A light emitting layer forming portion is formed of an AlGaInP-based compound semiconductor and having an n-type layer and a p-type layer to form a light emitting layer on the substrate. A large bandgap energy semiconductor layer is provided on a surface of the light emitting layer forming portion to constitute a window layer. A buffer layer is interposed between the light emitting layer forming portion and the large bandgap energy semiconductor layer to relieve lattice mismatch of between the light emitting layer forming portion and the large bandgap energy semiconductor layer. The interposition of this buffer layer provides a light emitting device that is high in light emitting efficiency and excellent in electrical characteristics without degrading the film property of the window layer.