The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2000
Filed:
Apr. 28, 1995
Ching-Ying Lee, Chu-Tung, TW;
Vanguard International Semiconductor Corporation, Hsin-Chu, TW;
Abstract
A method for inspection which involves the complete and sequential removal of an aluminum containing metallization layer, and other metal and insulator layers, from the surface of a silicon substrate. The layers are removed through sequential chemical etch processes tailored specifically to the composition of the individual layers. Upon removal of all layers, the surface of the silicon substrate is etched in a buffered aqueous etchant solution. The surface of the silicon substrate may then be inspected with the aid of an optical microscope to determine level to which the aluminum containing metallization layer has spiked into the silicon substrate.