The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2000
Filed:
Apr. 08, 1997
Applicant:
Inventors:
Jianping Yang, Alexandria, VA (US);
Banahalli R Ratna, Springfield, VA (US);
Assignee:
The United States of America as represented by the Secretary of the Navy, Washington, DC (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B / ; H01L / ;
U.S. Cl.
CPC ...
117 11 ; 117 68 ; 438 63 ;
Abstract
Nanocrystalline semiconductors are synthesized within a bicontinuous cubic atrix 10. The nanocrystalline particles 12 may then be end-capped 18 with a dispersant to prevent agglomeration. One typical nanocrystalline semiconductor compound made according to the present invention is PbS. Other IV-VI semiconductors may be produced by the method of the present invention. The method of this invention may also be used to produce doped semiconductors.