The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2000

Filed:

Sep. 01, 1998
Applicant:
Inventors:

Tsai-Sheng Gao, Hsinchu, TW;

Dong-Yuan Goang, Chung Li, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03D / ; G03D / ;
U.S. Cl.
CPC ...
396579 ; 396604 ; 396611 ;
Abstract

The present invention discloses an apparatus for photolithography process with phase-pretreatment. The apparatus comprises several chambers: a vapor prime chamber, a vacuum-bake chamber, a chill-plate chamber, a coater chamber and a stepper chamber. Further, an interface chamber is between the stepper chamber and the apparatus. These chambers are connected together to a track system. A base gas is introduced into one of these chambers to perform a gas-phase pretreatment. The concentration of the base gas can be controlled and the processing time of the pretreatment process is well controlled by operating the apparatus. As a photoresist layer is applied on a substrate, the photoresist layer is hardened in the base gas to increase the depth of focus in photolithography process.


Find Patent Forward Citations

Gao, Tsai-Sheng. (2000). Apparatus for photolithography process with gas-phase pretreatment (U.S. Patent No. 6106167). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6106167

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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