The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2000
Filed:
Dec. 24, 1997
Nortel Networks Corporation, Montreal, CA;
Abstract
A one dimensional series of complex coupled (gain or loss coupled) DFB semiconductor lasers is disclosed. Each laser comprises a multiple quantum well active region and a complex coupled grating having corrugations along a cavity length direction formed by periodically etching grooves through the active region. The grating has a period comprising a first section and a second section, wherein substantially all quantum wells are etched away from the second section providing no substantial photon generation in the second section. The depth of etching is defined so as to provide a substantial insensitivity of each laser to the external feedback and random facet variations and to ensure no substantial interaction between lasers in the series. The lasers in the series may further comprise means for tuning laser wavelengths around corresponding lasing modes and/or means for switching between the lasing modes. The series of lasers is also capable of simultaneous multi-wavelength generation, with the number of generated wavelengths being equal to a number of lasers in the series excited above threshold levels.