The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2000

Filed:

Dec. 18, 1997
Applicant:
Inventor:

Masaji Ueno, Sagamihara, JP;

Assignee:

Kabushiki Kaisha Toshiba, Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03B / ;
U.S. Cl.
CPC ...
327112 ; 327108 ; 327111 ;
Abstract

The chip size of the high breakdown voltage push-pull output circuit for the semiconductor device can be reduced by use of only the low breakdown voltage transistor elements. Between the voltage supply terminal HVCC and the ground terminal GND, the control transistor element (Q1) and the voltage transistor element (Q3) are connected in series and stacked vertically. In the same way, the voltage transistor element (Q4) and the control transistor element (Q2) are connected in series and stacked vertically. Further, the output terminal (OUT) is derived from between the voltage transistor element (Q3) and the voltage transistor element (Q4). The supply voltage of 12V supplied through the voltage supply terminal HVCC is divided as voltages of 6V by the bias circuit BI, and then supplied to the bases of the two voltage transistor elements (Q3 and Q4), respectively. When the output is low, the supply voltage of 12V is divided 1/2 by the control transistor element (Q1) and the voltage transistor element (Q3). On the other hand, when the output is high, the supply voltage of 12V is divided 1/2 by the voltage transistor element (Q4) and the control transistor element (Q2). Therefore, it is possible to construct a push-pull circuit with a high breakdown voltage by use of only the low breakdown voltage transistor elements.


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