The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2000
Filed:
Dec. 08, 1998
Applicant:
Inventor:
Qisheng Chen, Lino Lakes, MN (US);
Assignee:
APA Optics, Inc., Blaine, MN (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257453 ; 257184 ; 257449 ; 257472 ; 257473 ;
Abstract
The invention concerns the fabrication and characterization of vertical geometry transparent Schottky barrier ultraviolet detectors based on n.sup.- /n.sup.+ -GaN and AlGaN structures grown over sapphire substrates. Mesa geometry devices of different active areas were fabricated and characterized for spectral responsitivity, speed and noise characteristics. The invention also concerns the fabrication and characterization of an 8.times.8 Schottky barrier photodiode array on GaN with a pixel size of 200 .mu.m by 200 .mu.m.