The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2000
Filed:
Jul. 06, 1998
Applicant:
Inventors:
Takeshi Matsumoto, Tokyo, JP;
Hiroaki Maruyama, Kanagawa, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257371 ; 257369 ; 257382 ; 257384 ;
Abstract
A semiconductor device with reduced number of through holes is disclosed. A source region and a dielectric layer are connected by a conductive layer made of silicide formed on the surface of the source region and the dielectric layer commonly, and a drain region and an output electrode are connected by another conductive layer made of silicide. The conductive layer interconnecting the source region and the dielectric layer, and the conductive layer interconnecting the drain region and the output electrode are formed in one step as they are disposed beneath an insulation layer on the surface of the semiconductor substrate.