The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2000
Filed:
Feb. 17, 1998
Yukihiro Nagai, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
Obtaining a semiconductor device which can reduce the occupied area of a capacitor in a logic circuit area while ensuring a constant capacitance without increasing the number of steps of fabricating the semiconductor device, and a method of fabricating the same. A first electrode of a capacitor is formed in the logic circuit area. A dielectric film consisting of a first interlayer isolation film is formed on the first electrode. A second electrode is formed on the first interlayer isolation film. A second dielectric film consisting of a second interlayer isolation film is formed on the second electrode. A third electrode is formed on the second interlayer isolation film. A connecting wire connects the first electrode and the third electrode with each other through openings in the first and third connecting regions.