The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2000
Filed:
May. 23, 1997
Yasushi Iyechika, Tsukuba, JP;
Yoshinobu Ono, Ibaraki, JP;
Tomoyuki Takada, Tsukuba, JP;
Katsumi Inui, Tsukuba, JP;
Sumitomo Chemical Company, Limited, Osaka, JP;
Abstract
Disclosed is an electrode material for Group III-V compound semiconductor represented by the general formula In.sub.x Ga.sub.y Al.sub.z N (provided that x+y+z=1, 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, and 0.ltoreq.z.ltoreq.1) doped with a p-type impurity which is capable of obtaining good ohmic contact, and an electrode using the same, thereby making it possible to reduce a driving voltage of a device using the compound semiconductor. The electrode material is a metal comprising at least Ca and a noble metal, wherein the total amount of the weight of Ca and the noble metal is not less than 50% by weight and not more than 100% by weight based on the weight of the whole electrode material.