The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2000
Filed:
Dec. 03, 1997
Applicant:
Inventors:
Tony Chang, Hsinchu, TW;
Shiang-Peng Cheng, Hsinchu, TW;
Assignee:
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438778 ; 438775 ; 438787 ; 438659 ; 438688 ; 438788 ; 438792 ; 438798 ;
Abstract
A metal interconnection is formed on a dielectric layer. A pre-treatment is then performed to remove organic materials on the surface of the metal layer. The pre-treatment is done by plasma bombardment using NH.sub.3 and NO.sub.2 as the reaction gases. A thin oxide layer is subsequently deposited on the metal layer and on the dielectric layer. The oxide layer serves a buffer layer to eliminate the stress between the metal layer and subsequent silicon nitride layer. A silicon nitride layer is then formed on the thin oxide layer to act as a passivation layer.