The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2000
Filed:
Apr. 20, 1998
Yi-Min Jen, Taipei, TW;
Chung-Hsien Wu, Hsinchu, TW;
United Integrated Circuit Corp., Hsinchu, TW;
Abstract
The present invention discloses a method of forming a contact window on a substrate. The method in the present invention includes a step of forming a gate structure on said substrate having a gate oxide, a gate electrode on the gate oxide, and a gate electrode protection layer on the gate electrode, a step of forming a protection layer conforming with the substrate and the gate structure, and a step of forming a first insulation layer over the protection layer. The method further includes removing a portion of the first insulation layer and a portion of the protection layer for forming side wall spacers at side walls of the gate structure, performing a ion implantation to the substrate using the gate structure and the side wall spacers as a mask, and then forming a second insulation layer on the substrate, the side wall spacers, and the gate structure. The method further includes patterning a photoresist layer on the second insulation layer to expose a portion of second insulation layer for making a connection. Finally, a portion of the second insulation layer is removed for forming a contact window.