The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2000
Filed:
Feb. 28, 1997
Kenichi Nakabeppu, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
In a method for forming in a semiconductor device a stacked structure capacitor having a lower capacitor plate and an upper capacitor plate sandwiching a dielectric film therebetween, after a first conducting film, which becomes the lower capacitor plate, is formed, ionized clusters are implanted or impacted to a surface of the first conducting film. Thereafter, cluster-implanted regions are selectively removed from the surface of the first conducting film to resultantly roughen the surface of the first conducting film. Then, a dielectric film is formed on the roughened surface of the first conducting film, and a second conducting film, which becomes the upper capacitor plate, is formed on the dielectric film.