The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2000
Filed:
Mar. 26, 1999
Shuji Fujiwara, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A method of manufacturing a cylindrical stacked electrode, which comprises the steps of forming a silicon film on a semiconductor substrate, forming an insulating film over said silicon film, etching said insulating film to open a first hole that reaches the semiconductor substrate lying beneath said silicon film, forming a second hole with a wider diameter than said first hole through said insulating film and, concurrently with that, opening a contact hole using said silicon film as a mask, burying said contact hole and, in addition, forming an amorphous silicon film into a shape of a cylindrical stacked electrode, forming a second insulating film on said amorphous silicon film to bury said second hole, etching said second insulating film to the level of the amorphous silicon surface, etching said amorphous silicon film to the level of the first insulating film surface, removing said insulating film, and removing a portion of the silicon film formed on the semiconductor substrate that is all but an area directly below said cylindrical stacked electrode.