The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2000
Filed:
Aug. 10, 1999
Applicant:
Inventors:
Assignee:
Vanguard International Semiconductor Corp., Hsinchu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01G / ;
U.S. Cl.
CPC ...
438251 ; 438239 ; 438240 ; 438287 ; 438775 ; 438785 ;
Abstract
A method of fabricating a dielectric layer which is application to be used in a capacitor. A first conductive layer is provided. A nitridation step is performed on the first conductive layer, so that a nitride layer is formed on a surface of the first conductive layer. A dielectric layer with a high dielectric constant is formed, followed by a thermal treatment and an oxygen plasma treatment to terminate dangling bonds of the dielectric layer. Consequently, oxygen is distributed on a surface of the dielectric layer and bonded with dangling bonds of the dielectric layer distributed on the surface.