The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2000

Filed:

Dec. 09, 1996
Applicant:
Inventors:

Tsuyoshi Tamaru, Ome, JP;

Shinpei Iijima, Akishima, JP;

Natsuki Yokoyama, Mitaka, JP;

Masayuki Nakata, Kodaira, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438240 ; 438683 ;
Abstract

A dynamic random access memory or the like, in which in order to prevent the breakdown voltage deterioration of a capacitive element when a TiN film of an electrode material is deposited by the CVD method over a tantalum film constituting the capacitor insulating film of the capacitive element, a passivation film is formed in advance over the surface of the tantalum oxide film to prevent the tantalum oxide film from contacting a nitrogen-containing reducing gas, when the TiN film is deposited over the tantalum oxide film by the CVD method using a titanium-containing source gas and the nitrogen-containing reducing gas.


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