The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2000
Filed:
Mar. 13, 1998
Applicant:
Inventor:
Ming-Kwei Lee, Kaohsiung, TW;
Assignee:
National Science Council, Taipei, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438 57 ; 438 73 ; 438466 ; 438705 ; 136261 ;
Abstract
The rapid thermal oxidation (RTO) and rapid thermal annealing(RTA) were used to improve the photo-current and photoresponsivity of porous silicon photodetector. In addition, we remove the surface oxide of the porous silicon under the metal grid using the same mask, and enhance the photo-current of porous silicon photodetector at zero bias voltage. This invention removes the limitation of application of the porous silicon photodetector.