The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2000
Filed:
Dec. 09, 1996
Tadashi Atoji, Machida, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A process for fabricating a SOI substrate efficiently removes a non-porous Si region on a porous Si region, and solves the problem of etching of glass substrates and the problem that a relatively thick porous Si region is necessary. The process for fabricating a SOI substrate comprises a step of making a surface layer of a single-crystal Si substrate porous to form a porous single-crystal Si region on a first non-porous single-crystal Si region; a step of forming a second non-porous single-crystal Si region over a surface of the porous single-crystal Si region; a step of bonding a support substrate through an insulating region to a surface of the second non-porous single-crystal Si region; a step of removing the first non-porous single-crystal Si region; and a step of removing the porous single-crystal Si region, wherein the step of removing the first non-porous single-crystal Si region comprises a step of performing dry etching in which an etch rate of non-porous single-crystal Si region is greater than that of porous single-crystal Si region.