The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2000
Filed:
Dec. 01, 1999
Applicant:
Inventors:
Hideo Taniguchi, Kyoto, JP;
Yasuhisa Fujii, Kyoto, JP;
Assignee:
Rohm Co., Ltd., Kyoto, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B41J / ;
U.S. Cl.
CPC ...
347204 ; 347 62 ;
Abstract
A polycrystalline layer is formed on a surface of a substrate and metal electrode layers are formed thereon to be opposed to each other. The polycrystalline silicon layer includes an exposed region exposed from the metal electrode layers, and this exposed region includes low resistance regions extending under the metal electrode layers to be in a pair, and a high resistance region having a high sheet resistance defined between the low resistance regions. At least one of the low resistance regions is so trimmed as to adjust heat generation from the high resistance region.