The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2000
Filed:
Aug. 21, 1998
Chang Seok Lee, Dejon-Shi, KR;
Min Gun Kim, Daejon-Shi, KR;
Jae Jin Lee, Daejon-Shi, KR;
Kwang Eui Pyun, Daejon-Shi, KR;
Electronics and Telecommunications Research Institute, Daejon-Shi, KR;
Abstract
The present invention relates to a bias stabilization circuit, specifically to a bias stabilization circuit for minimizing the current variations of amplification transistors caused by variations of device parameters which occur during the manufacturing of high-frequency integrated circuits using field-effect transistors, and caused by variations of supply voltage and temperature. In the present invention, the above problem is solved by configuring a level shifter circuit between the drain node and the gate node of the reference voltage generation transistor. Further, by using a constant current source utilizing a depletion transistor and series feedback resistors as a reference current, this circuit becomes stable against the variations of the device parameters as well as the variations of the temperature and supply voltage.