The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2000
Filed:
May. 18, 1999
Koji Ishii, Tokyo, JP;
NEC Corporation, , JP;
Abstract
There is provided a semiconductor device including a substrate, a first insulating film formed on the substrate, a first electrically conductive layer formed on the first insulating film, a dielectric layer formed on the first electrically conductive layer, the dielectric layer being formed with a first through-hole, a second electrically conductive layer formed on the dielectric layer, the second electrically conductive layer being formed with a second through-hole in alignment with the first through-hole, a second insulating film covering the first and second electrically conductive layers therewith, and a first wiring layer formed on the second insulating film, a first contact hole being formed through the second insulating film, and the dielectric layer and the second electrically conductive layer both in the first and second through-holes, the first wiring layer making electrical contact with the first electrically conductive layer through the first contact hole. The semiconductor device effectively reduces parasitic resistance of the first electrically conductive layer without an increase in an area of the first electrically conductive layer.