The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 08, 2000

Filed:

Oct. 19, 1998
Applicant:
Inventor:

Yutaka Saito, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257446 ; 257225 ; 257436 ;
Abstract

A semiconductor device is provided wherein carrier flows in a monocrystal silicon film having low oxygen concentration. As for a structure of the semiconductor device, a single semiconductor element or a plurality of semiconductor elements are provided on the monocrystal silicon film having low oxygen concentration which is provided on a backing substrate of which at least the surface is made of an insulating material. The backing substrate is provided so that the semiconductor device gets mechanical destructive strength. The insulating material is provided so that some particles never transfers from the backing substrate to the semiconductor film. The silicon film has-low oxygen concentration so that the lifetime of a minor carrier lengthens.


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