The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2000
Filed:
Mar. 26, 1999
Applicant:
Inventor:
Simon J Lovett, Milpitas, CA (US);
Assignee:
Cypress Semiconductor Corp., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257315 ; 257321 ; 36518533 ;
Abstract
A nonvolatile cell comprising a first device comprising a first transistor type and a second device comprising a second transistor type. The first device may have a gate, a source, a drain and a gate oxide layer over the gate. The second device may have a gate, a source, a drain and a floating gate formed between the gate of said first device and the gate of the second device. The floating gate may be configured to store a charge in response to (i) a first voltage applied to the source and drain of said first device and (ii) a second voltage applied to the source and drain of the second device.