The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2000
Filed:
Aug. 12, 1998
Charles E Weitzel, Mesa, AZ (US);
Mohit Bhatnagar, Chandler, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A high breakdown voltage HFET includes a reduced surface field (RESURF) layer of p-type conductivity GaN positioned on a substrate with a channel layer of n-type conductivity GaN positioned thereon. A barrier layer of n-type conductivity Al.sub.x Ga.sub.1-x N is positioned on the channel layer to form a lateral channel adjacent to and parallel with the interface. A gate electrode is positioned on the barrier layer overlying the lateral channel and a drain electrode is positioned on the channel layer in contact with the lateral channel and spaced to one side of the gate electrode a distance which determines the breakdown voltage. A source electrode is positioned on the channel layer to the opposite side of the gate electrode, in contact with the lateral channel and also in contact with the RESURF layer.