The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2000
Filed:
Dec. 21, 1998
Applicant:
Inventors:
Peter C Van Buskirk, Newtown, CT (US);
Michael W Russell, Norwalk, CT (US);
Daniel J Vestyck, Danbury, CT (US);
Scott R Summerfelt, Dallas, TX (US);
Theodore S Moise, Dallas, TX (US);
Assignee:
Advanced Technology Materials, Inc., Danbury, CT (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438697 ; 438700 ; 438702 ; 438706 ; 438710 ; 438714 ; 438720 ; 438722 ; 438584 ; 438641 ; 438648 ; 438650 ; 438652 ; 438656 ; 438715 ;
Abstract
The present invention is a method related to the deposition of a metallization layer in a trench in a semiconductor substrate. The focus of the invention is to sequentially perform heated deposition and etch unit processes to provide a good conformal film of metal on the inner surfaces of a via or trench. The deposition and etch steps can also be performed simultaneously.