The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2000
Filed:
Apr. 21, 1998
Applicant:
Inventor:
Kunihiro Takatani, Yamatotakada, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438605 ; 438602 ; 438604 ; 257744 ; 257745 ;
Abstract
A GaN group compound semiconductor device includes an electrode structure provided on a p-GaN group compound semiconductor layer, the electrode structure including: a first layer formed on the p-GaN group compound semiconductor layer, the first layer including a compound including a first metal element and Ga; and a second layer formed on the first layer, the second layer including the first metal element. The first layer contains substantially no nitrogen.