Method of making a resistor utilizing a polysilicon plug formed with a

Abstract

A method of making a resistor begins with forming a field effect transistor on a silicon semiconductor substrate. Then a first insulating layer is deposited on the field effect transistor. The first insulating layer is etched by the photolithography and etching techniques to form a bit line contact, and a bit line is subsequently formed. Next, upon the entire structure, a second insulating layer is formed and etched by the photolithography and ion etching techniques to form a contact hole with high aspect ratio. A polysilicon layer is deposited across the contact hole and the polysilicon outside the contact hole is removed, forming a polysilicon plug in the contact hole. Then, a third insulating layer is formed and etched to form a contact hole for metallurgy. After a first metal interconnection is formed, a third insulating layer is formed upon the entire structure and then etched to form a via hole by the photolithography and plasma etching techniques. A second metal interconnection is then formed and completes the static random access memory (SRAM) cell.