The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2000
Filed:
Apr. 06, 1998
Applicant:
Inventor:
Andrei Konstantinov, Jarfalla, SE;
Assignee:
ABB Research Ltd., Vasteras, SE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438 92 ; 438 93 ; 438483 ; 438518 ;
Abstract
A method of fabricating a semiconductor device on a substrate, wherein the substrate comprises a first layer of doped silicon carbide of a first conducting type and exhibits at least one hollow defect. In a first step the positions of the hollow defects in the substrate are identified, whereafter a second SiC layer of a second conducting type is formed in contact with the first layer, whereafter the first and second layer constituting the pn junction are provided with at least one edge termination surrounding any hollow defect, whereby the defect is excluded from the high-field region of the device.