The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2000
Filed:
Oct. 05, 1993
John D Miller, Plano, TX (US);
W Leon Cooley, Garland, TX (US);
Tim Herman, Napa, CA (US);
Robert R Moore, Napa, CA (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A submicron filter assembly (24) is added to an exhaust gas controlled destruction and oxidation unit (10). Controlled destruction and oxidation unit (10) treats exhaust gas from at least one semiconductor wafer fabricating reactor. The submicron filter (24) filters submicron particles out of the treated exhaust gas to prevent visible plumes from forming in wafer fab exhaust systems (stacks). The controlled destruction and oxidation unit (10) and submicron filter assembly (24) are ideally suited for use at the point of generation of the exhaust gases. In one embodiment of the invention, the submicron filter assembly comprises an electrostatic filter (26). The electrostatic filter (26) includes a positively charged first grid (28) and a grounded second grid (30). The second grid may include a mist screen for removing particulate build-up. In another embodiment of the invention, the submicron filter assembly (36) comprises a mist eliminator (38) and a HEPA filter (40).