The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2000
Filed:
Jul. 09, 1999
Micheal E Easley, Perrin, TX (US);
Ronald E Plummer, Decatur, TX (US);
Union Oil Company of California, El Segundo, CA (US);
Abstract
An apparatus for holding a plurality of semiconductor wafers during heat treatment of the wafers in a furnace, which apparatus comprises a plurality of support members or rails extending essentially vertically between a top and bottom plate. At least two of the support members are located toward the front of the carrier where the wafers are inserted, and at least one support member is located toward the back of the carrier. A first plurality of slats is attached to one of the front support members and to a back support member such that the space between the top surface of one slat and the bottom surface of the next higher adjacent slat forms a slot for receiving a portion of a semiconductor wafer. A second plurality of slats is attached to another front support member and to a back support member to form corresponding slots on another side of the carrier for receiving another portion of a semiconductor wafer. Preferably, each slat contains at least one raised structure which is used to support the underside of a semiconductor wafer. Such an apparatus having multiple slats interconnected with the vertical support members provides a strong carrier for uniformly supporting larger wafers, i.e., wafers having a nominal diameter greater than about 200 millimeters, such that their own weight does not cause the wafers to sag and thereby produce crystal dislocations or slip when the wafers are heated to high temperatures.