The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2000

Filed:

Mar. 11, 1999
Applicant:
Inventor:

Hiroyuki Kobatake, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
36518518 ; 36518523 ; 36523001 ;
Abstract

A non-volatile semiconductor storage device has a plurality of non-volatile memory cells formed by cell transistors in which a first voltage is applied to a word line through an address selection circuit and a second voltage lower than the first voltage is applied to the transistors through a selection line and/or a bit line. The voltage applied to the transistors is lower than that conventionally employed. Accordingly, a withstand voltage of the transistor can be reduced to decrease the occupied area of the transistors to realize higher integration.


Find Patent Forward Citations

Kobatake, Hiroyuki. (2000). Non-volatile semiconductor storage device selecting bit lines on voltage (U.S. Patent No. 6097630). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6097630

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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