The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2000

Filed:

May. 14, 1997
Applicant:
Inventors:

Carver A Mead, Pasadena, CA (US);

Tobias Delbruck, Pasadena, CA (US);

Assignee:

Synaptics, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H04N / ; H04N / ; G01R / ; H01L / ;
U.S. Cl.
CPC ...
348302 ; 327 52 ; 257292 ;
Abstract

A sense amplifier comprises an input node and an output node. An input transistor has a gate connected to the input node, a source connected to a first supply voltage rail, and a drain. A cascode transistor has a gate connected to a cascode node, a source connected to the drain of the input transistor, and a drain connected to the output node. A load transistor has a gate connected to a bias node, a drain connected to the output node, and a source connected to a second supply voltage rail. The gates of the cascode transistor and the load transistor are biased such that the input transistor and the cascode transistor are operated near their threshold and the load transistor is operated above threshold. In a presently preferred embodiment of the present invention, the input transistor and the cascode transistor of the sense amplifier are wide and short, such that they operate in below threshold, whereas the load transistor is made long and relatively narrow, so that it operates above threshold.


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