The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2000

Filed:

May. 22, 1998
Applicant:
Inventors:

Gilles Troussel, Saint Martin d'Heres, FR;

Celine Lardeau, Grenoble, FR;

Assignee:

STMicroelectronics S.A., Gentilly, FR;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K / ; H03K / ;
U.S. Cl.
CPC ...
326 63 ; 326 68 ; 326 83 ;
Abstract

The present invention relates to a power output stage for the control of plasma screen cells. It includes VDMOS-type N-channel charge and discharge transistors, the charge transistor being arranged to form a compound P-channel transistor. These transistors enable to issue a charge current to an output and to absorb a discharge current from this output. Two inverters are sized so that the potential of the control gate of the charge transistor drops more rapidly than the output potential when a discharge of this output is controlled. Thus, an output stage of limited bulk and without any risk of simultaneous conduction of the charge and discharge transistors is implemented.


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