The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2000
Filed:
Feb. 04, 1999
Tim Z Hossain, Austin, TX (US);
Franklin D Crawford, Jr, Austin, TX (US);
Don A Tiffin, Austin, TX (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
An interlevel dielectric and a method for making same wherein boron is introduced into the dielectric though an implantation process. During the implantation process, either the boron-10 or the boron-11 boron isotope may be selected and introduced into the dielectric. Boron is introduced to make the dielectric flow at lower temperatures. Selectively implanting boron-10 or boron-11 during implantation, as opposed to buying boron comprising a specific boron isotope from a supplier and introducing boron during CVD, lowers the production costs. Furthermore, introducing boron into the dielectric during the implantation process as opposed to during deposition of the dielectric during a CVD process, the dielectric layer is free of 'boron' bumps. Boron-bearing dielectrics can be made to made to flow at lower temperatures than dielectrics which do not contain boron. Furthermore, boron-11 can be introduced exclusively into the dielectric during the implantation process to eliminate soft errors caused by the formation of alpha particles. Boron-10 is a major source of alpha particles formed in a nuclear reaction between boron-10 and cosmic ray neutrons.