The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2000
Filed:
Mar. 24, 1999
Sang-pil Sim, Suwon, KR;
Won-saong Lee, Seoul, KR;
Samsung Electronics, Co., Ltd., Suwon, KR;
Abstract
A method is provided for forming a triple well of a semiconductor memory device, where a second well of a second conductive type encloses a second well of a first conductive type. A single mask is used for ion implanting the base of the enclosing well and also the entire enclosed well, which inherently avoids misalignment. Additional doping is provided to the location where the sidewalls of the enclosing well join its base. This is accomplished either by a second, deeper ion implant of the sidewalls, or by ion implanting the base at an angle and rotating it, or both. Alternately, the single mask pattern is processed between the ion implantation steps to alter its width.