The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2000
Filed:
Nov. 29, 1993
Applicant:
Inventor:
Donald L Plumton, Dallas, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257266 ; 257272 ; 257267 ; 257471 ; 257472 ; 257474 ; 257476 ;
Abstract
A vertical field effect transistor (1400) and diode (1450) formed on a single III-V substrate. The diode cathode and the transistor drain or collector may be formed in a common layer (1408).