The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2000
Filed:
May. 08, 1998
Seung-ki Joo, Seoul, KR;
Tae-Hyung Ihn, Seoul, KR;
Other;
Abstract
A transistor includes an MILC (metal-induced lateral crystallization) region formed on a substrate with a semiconductor material and including a channel region, and a plurality of MIC (metal-induced crystallization) regions formed on the sides of the MILC region with a semiconductor material, wherein at least one boundary between the MILC region and one of the MIC regions is located outside the channel region. A method of fabricating a transistor includes the steps of forming an MILC (metal-induced lateral crystallization) region on a substrate using a semiconductor material, the MILC region including a channel region, and forming a plurality of MIC (metal-induced crystallization) regions formed on sides of the MILC region using a semiconductor material, wherein at least one boundary between the MILC region and one of the MIC regions is located outside the channel region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile