The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2000
Filed:
Jun. 26, 1998
Shye-Lin Wu, Hsinchu, TW;
Acer Semiconductor Manufacturing Inc., Hsinchu, TW;
Abstract
The present invention proposes a method for fabricating field oxide regions for isolation by an improved poly-buffered local oxidation of silicon (PBLOCOS) process. A polysilicon layer is utilized to reduce the bird's beak, and a thin thermal oxide film is formed on the buffered polysilicon film to prevent pitting formation. Forming a thin pad oxide and a silicon layer, a thermal oxidation is carried out to grow another pad oxide on the silicon layer and crystallize the silicon into polysilicon. The buffered layer of stacked oxide-polysilicon-oxide layer is thus formed. The silicon nitride layer is then deposited on the stacked buffered layer and the active areas are defined. A thermal oxidation is now performed, and thick field oxide regions are grown. After the masking nitride layer and the stacked buffered layer are stripped, the MOS devices are fabricated, and thus complete the present invention.