The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2000
Filed:
May. 04, 1998
Applicant:
Inventor:
Steven L Merchant, Phoenix, AZ (US);
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438268 ; 438273 ; 438212 ; 257336 ; 257339 ; 257342 ; 257343 ; 257335 ;
Abstract
A semiconductor device (10) is formed in a semiconductor substrate (11) and an epitaxial layer (14). The semiconductor device includes a p-type body region (16), a source region (17), a channel region (19), and a drain region (102) formed in the epitaxial layer (14). Doped regions (20,22) are formed in the epitaxial layer (14) that contain dopant of a conductivity type that is opposite to the epitaxial layer (14). The doped regions (20,22) divide the epitaxial layer (14) to provide or define doped regions (21,23). The doped regions (20,22) are formed from a plurality of doped regions (30,31,32,33) that can be formed with high energy implants.