The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2000
Filed:
Jan. 12, 1999
Ji Hyeog Kim, Chungcheongnam-do, KR;
Sung Youn Kim, Chungcheongbuk-do, KR;
LG Semicon Co., Ltd., Chungcheongbuk-Do, KR;
Abstract
A method for fabricating a flash memory cell includes forming first gate insulating films and polysilicon layers in succession on a substrate, wherein the first gate insulating films and the polysilicon layers extend in a first direction, and forming buried regions in the substrate under portions of the polysilicon layers. The method includes forming second insulating films, control gates, and cap insulating films in succession on the substrate and the polysilicon layers, and forming first sidewall spacers at both sides of the control gates. The method further includes forming floating gates by patterning the polysilicon layers using the first sidewall spacers as masks, forming field insulating films between the floating gates, and forming erasure gates on the field insulating films between the floating gates.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile