The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2000
Filed:
Feb. 28, 1997
Duane Brian Dimos, Albuquerque, NM (US);
Robert William Schwartz, Albuquerque, NM (US);
Mark Victor Raymond, Albuquerque, NM (US);
Husam Niman Al-Shareef, Boise, ID (US);
Carl Mueller, Lakewood, CO (US);
David Galt, Denver, CO (US);
Superconducting Core Technologies, Inc., Golden, CO (US);
Abstract
The present invention is directed to a method for forming dielectric thin films having substantially reduced electrical losses at microwave and millimeter wave frequencies relative to conventional dielectric thin films. The reduction in losses is realized by dramatically increasing the grain sizes of the dielectric films, thereby minimizing intergranular scattering of the microwave signal due to grain boundaries and point defects. The increase in grain size is realized by heating the film to a temperature at which the grains experience regrowth. The grain size of the films can be further increased by first depositing the films with an excess of one of the compoents, such that a highly mobile grain boundary phase is formed.